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rq3e080bn nch 30v 8a middle power mosfet datasheet ll outline v dss 30v hsmt8 r ds(on) (max.) 15.2m i d 8a p d 2w ll inner circuit ll features 1) low on - resistance. 2) high power package (hsmt8). 3) pb-free lead plating ; rohs compliant. 4) halogen free. ll packaging specifications type packing embossed tape reel size (mm) 330 ll application tape width (mm) 12 switching basic ordering unit (pcs) 3000 taping code tb marking e080bn ll absolute maximum ratings (t a = 25c) parameter symbol value unit drain - source voltage v dss 30 v continuous drain current i d 8 a pulsed drain current i d,pulse *1 32 a gate - source voltage v gss 20 v power dissipation p d *2 2 w junction temperature t j 150 range of storage temperature t stg -55 to +150 www.rohm.com ? 2014 rohm co., ltd. all rights reserved. 1/11 20141107 - rev.001 downloaded from: http:///
rq3e080bn datasheet ll thermal resistance parameter symbol values unit min. typ. max. thermal resistance, junction - ambient r thja *2 - 62.5 - /w ll electrical characteristics (t a = 25c) parameter symbol conditions values unit min. typ. max. drain - source breakdown voltage v (br)dss v gs = 0v, i d = 1ma 30 - - v breakdown voltage temperature coefficient v (br)dss i d = 1ma - 21 - mv/ t j referenced to 25 zero gate voltage drain current i dss v ds = 30v, v gs = 0v - - 1 a gate - source leakage current i gss v gs = 20v, v ds = 0v - - 100 na gate threshold voltage v gs(th) v ds = 10v, i d = 1ma 1.0 - 2.5 v gate threshold voltage temperature coefficient v gs(th) i d = 1ma - -3 - mv/ t j referenced to 25 static drain - source on - state resistance r ds(on) *3 v gs = 10v, i d = 8a - 11.0 15.2 m v gs = 4.5v, i d = 8a - 16.0 22.0 gate input resistance r g - 3.2 - transconductance g fs *3 v ds = 5v, i d = 8a 7 - - s *1 pw Q 10s , duty cycle Q 1% *2 mounted on a ceramic boad (30300.8mm) *3 pulsed www.rohm.com ? 2014 rohm co., ltd. all rights reserved. 2/11 20141107 - rev.001 downloaded from: http:///
rq3e080bn datasheet ll e lectrical characteristics (t a = 25c) parameter symbol conditions values unit min. typ. max. input capacitance c iss v gs = 0v - 660 - pf output capacitance c oss v ds = 15v - 90 - reverse transfer capacitance c rss f = 1mhz - 75 - turn - on delay time t d(on) *3 v dd ? 15v,v gs = 10v - 8 - ns rise time t r *3 i d = 4a - 20 - turn - off delay time t d(off) *3 r l = 3.75 - 33 - fall time t f *3 r g = 10 - 7 - ll gate charge characteristics (t a = 25c) parameter symbol conditions values unit min. typ. max. total gate charge q g *3 v dd ? 15v i d = 8a v gs = 10v - 14.5 - nc v gs = 4.5v - 7.2 - gate - source charge q gs *3 - 2.0 - gate - drain charge q gd *3 - 3.0 - ll body diode electrical characteristics (source-drain) (t a = 25c) parameter symbol conditions values unit min. typ. max. body diode continuous forward current i s t a = 25 - - 1.67 a body diode pulse current i sp *1 - - 32 forward voltage v sd *3 v gs = 0v, i s = 1.67a - - 1.2 v www.rohm.com ? 2014 rohm co., ltd. all rights reserved. 3/11 20141107 - rev.001 downloaded from: http:///
rq3e080bn datasheet ll e lectrical characteristic c urves fig.1 power dissipation derating curve fig.2 maximum safe operating area fig.3 normalized transient thermal resistance vs. pulse width fig.4 single pulse maximum power dissipation www.rohm.com ? 2014 rohm co., ltd. all rights reserved. 4/11 20141107 - rev.001 downloaded from: http:///
rq3e080bn datasheet ll e lectrical characteristic curves fig. 5 typical output characteristics(i) fig.6 typical ou tput characteristics(ii) fig.7 breakdown voltage vs. junction temperature www.rohm.com ? 2014 rohm co., ltd. all rights reserved. 5/11 20141107 - rev.001 downloaded from: http:///
rq3e080bn datasheet ll e lectrical characteristic curves fig. 8 typical transfer characteristics fig.9 gate thresh old voltage vs. junction temperature fig.10 tranceconductance vs. drain current www.rohm.com ? 2014 rohm co., ltd. all rights reserved. 6/11 20141107 - rev.001 downloaded from: http:///
rq3e080bn datasheet ll e lectrical characteristic curves fig. 11 d rain current derating curve fig.12 static drain - so urce on - state resistance vs. gate source voltage fig.13 static drain - source on - state resistance vs. junction temperature www.rohm.com ? 2014 rohm co., ltd. all rights reserved. 7/11 20141107 - rev.001 downloaded from: http:///
rq3e080bn datasheet ll e lectrical characteristic curves fig. 1 4 static drain - source on - state resistance vs. drain current(i) fig.15 static drain - source on - state resistance vs. drain current(ii) fig.16 static drain - source on - state resistance vs. drain current(iii) www.rohm.com ? 2014 rohm co., ltd. all rights reserved. 8/11 20141107 - rev.001 downloaded from: http:///
rq3e080bn datasheet ll e lectrical characteristic curves fig. 1 7 typical capacitance vs. drain - source voltage fig.18 switching characteristics fig.19 dynamic input characteristics fig.20 source c urrent vs. source drain voltage www.rohm.com ? 2014 rohm co., ltd. all rights reserved. 9/11 20141107 - rev.001 downloaded from: http:///
rq3e080bn datasheet ll measurement circuits fig.1 -1 switching time measurement circuit fig.1-2 switch ing waveforms fig.2-1 gate charge measurement circuit fig.2-2 gate charge waveform ll notice this product might cause chip aging and breakdown u nder the large electrified environment. please consider to design esd protection circuit. www.rohm.com ? 2014 rohm co., ltd. all rights reserved. 10/11 20141107 - rev.001 downloaded from: http:///
rq3e080bn datasheet ll dimensions www.rohm.com ? 2014 rohm co., ltd. all rights reserved. 11/11 20141107 - rev.001 downloaded from: http:///
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